Apparatus and method for optically initiating collapse of a reverse biased P-type-N-type junction

ABSTRACT

An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

TECHNICAL FIELD

The present invention relates to electronic semiconductor switches and,more particularly, to all semiconductor switches that employP-type:N-type junctions for blocking conduction, including but notlimited to diodes, all types of thyristors, insulated gate bipolartransistors, and bipolar transistors.

BACKGROUND ART

Advanced power switching technologies are needed to enable futuredefense and commercial power control capabilities and concepts, butcapabilities are presently limited by the availability of preciselycontrollable, high voltage (10-100 kV), high current (1-100 kA)switches. For example, presently available semiconductor switches arelimited in per device parameters on the order of 1 kV and several tensof amps with switching times of several hundred nanoseconds.Conventional high power semiconductor switches rely on the blockingelectric field produced by the charge accumulation at the depletionregion between P-type material and N-type material which is termed a PNjunction. In order to change the switch impedance from a large value toa small value, the PN junction electric field must be collapsed throughelectron avalanche processes or flooded with sufficient electricalcharge to reduce the blocking electric field magnitude. Mostsemiconductor switches including all types of Thyristors, BipolarTransistors (BJTs), Insulated Gate bipolar Transistors (IGBTs), andother devices that employ a reverse biased PN junction to block currentflow in the switch “open” condition. Switching from the blocking stateto the conduction state is accomplished by injecting charge in thereversed biased junction, by increasing the electric field in thedepletion region to exceed the dielectric strength of the junction,and/or injecting avalanche seed electrons into the electric fieldthrough capacitive coupling. These processes are spatially andtemporally dependent upon the mechanisms required to inject charge, thetime required to raise the electric field, or the transverse spreadingvelocity of the conducting plasma across the entire cross section of thedevice to reduce the switch impedance. Therefore, most P-Njunction-based switches employing charge injection triggering result inclosure times of hundreds of nanoseconds to multiple microseconds thatseverely limit high power, high frequency operation. More importantly,operating these types of switches in circuits in which the current risetime is much less than the impedance or voltage fall time of the switchresult in excessive power dissipation in the switch which furtherrelates to system efficiency and switch lifetime limitations.

The other approaches to high voltage, high power, high frequency powerswitches are optically based. Specifically, the three main opticallycontrolled semiconductor switches are (1) linear photo-conductiveswitches, (2) non-linear optically initiated electron avalancheswitches, and (3) optically gated PN junction devices. The most common,linear photo-conductive switches as illustrated in FIG. 1, uses photonenergy greater than the semiconductor band gap energy or above bandphotons from a source (70) to uniformly illuminate a semiconductor (72)between electrodes (73). In a linear photo-conductive switch, the photonenergy of the controlling optical source is greater than thesemiconductor band gap energy such that the energy is absorbed in theabsorption depth (75) of the semiconductor. Ideally, each absorbedphoton generates an electron (76) hole (77) pair to reduce thesemiconductor resistivity and transition the initial large resistancethat limits current flow to a small resistance that permits conduction.The increase in the density of electrons and holes between the switchelectrodes reduces the switch resistance in the time the optical energyis delivered to the switch, which can be nanoseconds when a high poweroptical source such as a laser is employed. The photo-conductivityproduced by the optical source decays as determined by the semiconductorrecombination time such that the switch will return to a high resistancestate when the incident optical energy is terminated. For example, therecombination time in silicon can be as large as milliseconds while therecombination time in gallium arsenide (GaAs) can be less thannanoseconds. Alternatively, the conductivity can be maintained byreducing the optical intensity to the value that compensates for theloss of holes and electrons to recombination.

A second type of linear photo-conductive switch that employs photonenergy less than the semiconductor band gap energy or sub-band photons,is illustrated in FIG. 2. In this embodiment, a semiconductor (80) issandwiched between two electrodes (81). Sub-band photon energy isinjected (83) at the edge of the semiconductor. The sub-band photonenergy is less than the band gap energy, but sufficient to be absorbedand ionize mid-band dopants. The energy absorbed by mid-band dopants inthe semiconductor produce electrons (85) and holes (86) to increase theconductivity of the semiconductor (82) and change the switch impedancefrom blocking to conduction. In the case of sub-band photons, theeffective optical absorption depth can be several cm, for example in thecase of silicon carbide, which enables most of the injected opticalenergy to penetrate to the region between the electrodes (84). Asufficient quantity of sub-band photons is injected and absorbed in theregion between the electrodes to increase the semiconductor conductivityand change the switch resistance from a large blocking resistance to anappropriate conduction resistance. In this case, after the optical pulseterminates, the conductivity also returns to the off state with therecombination time of the host material.

Linear photo-conductive switches have demonstrated capability to switchhigh voltages (10-100 kV) and conduct high currents (1-20 kA) withprecise temporal control (sub nanosecond). However, linearphoto-conductive switches are limited by the requirement for asubstantial laser system that makes them suited only to laboratorysystems or fast systems which cannot be provided by other means. Thuslinear photo-conductive switches are applicable in high power, precisecontrol or fast rise time pulse generation systems.

The second optically controlled switch technology is based on extensivework at Sandia National Laboratories in Albuquerque (SNLA) in thedevelopment of optically initiated electron avalanche switches inGallium Arsenide (GaAs). The SNLA approach, illustrated in FIG. 3, iscommonly fabricated on the surface of a semi-insulating GaAs wafer (103)by depositing dopants and metals to form contacts (104) and (105). Anabove band optical source is configured to inject tens of nano Joules ofoptical energy via optical fiber or optical components at multiple sites(106) near the cathode electrode (104) to initiate electron avalanchestreamers (107) that cross the switch to the anode electrode (105). ThisGaAs approach is termed a non-linear or high gain approach since theabsorbed photons are employed only to initiate an electron avalanchestreamer that produce a much larger number of electron-hole pairsthrough electron impact ionization or avalanche and reduce the opticalenergy required by up to 4 orders of magnitude when compared to thelinear photo-conductive switch approach. A unique feature of thenon-liner photo switch in GaAs is that conduction continues after theoptical pulse is terminated. This continued conduction is termed “lockon” mode. A major limitation of the non-linear GaAs switch is that thecurrent in each conducting filament is limited to 20-50 amps with thelifetime of the switch inversely related to the filament current. Asecond limitation of multiple filament non-linear GaAs photo switches isthat the filaments initiated at multiple sites tend to coalesce into oneconduction path, also illustrated in FIG. 3. The coalesced currentdensity has shown to damage the contacts and the GaAs substrate, whichalso limits the switch capability.

In order to increase the current capability of the non-linear switches,much additional work has shown that the path of the individual streamers(107) can be controlled by illuminating lines (108) between the cathodeelectrode (104) and the anode electrode (105) across the switch (108) asillustrated in FIG. 4.

A third optically controlled switch is the optically gated PN junctionswitch, illustrated in FIG. 5, and an optically gated Bipolar JunctionTransistor, illustrated in FIG. 6, as in a reverse biased SiliconCarbide (SiC) P-type, intrinsic, N-type (PIN) diode.

The optically gated PIN diode of FIG. 5 may be fabricated by depositingcontacts (110) on the P-type SiC (112) formed on one side of anintrinsic or slightly N-type SiC wafer (113). A heavily doped n-typelayer (114) is formed on the opposite side of the wafer to interface tothe negative contact (115). To change the reverse biased PIN diode fromblocking current flow to conducting current, above band photons (111)(photon energy greater than the band gap energy) are deposited in thep-type surface where the energy is absorbed in much less than 1 mm. Thephotons absorbed in the p-type layer (112) produce electron (116) hole(117) pairs. The holes move toward the negative terminal (110) and theelectrons drift into the PIN diode intrinsic wafer (113) to provide seedelectrons for avalanche impact ionization and result in current flowthrough the reverse biased PIN diode. The current conduction continueswhile the optical energy is present and conduction ceases after theoptical energy is terminated and any residual electrons have been sweptout of the device. In the optically gated bipolar junction transistor(BJT) of FIG. 6, above band photons (121) are projected on the surfaceof the base region through a Silicon Dioxide layer (122) and absorbed ina thin layer of the base (124). The absorbed band photons produceelectron-hole pairs (128) and (129) in the base region that move in theelectric field to the emitter (123) and exit through contact (120) whilethe electrons are injected into the base (124) collector (125) junctionand amplified by the BJT gain to exit to the collector contact(126)/(127). This device is critically dependent upon the optical energybeing injected such that current is terminated after the opticallygenerated electrons are swept from the device.

Limitations of Existing Switch Technologies.

Conventional high-voltage semiconductor switches have limitedperformance portfolios of the combination of operating voltage,operating current, transition or switching time. For example, thyristorscan handle moderate voltages (several kilovolts), very large currents(100s of kA), but turn on very slowly (microseconds) while field effecttransistors or FETs will support moderate voltages (several kilovolts),turn on very fast (ns) but handle only small currents (tens of amps).Major applications require a switch that will handle large voltages(tens of kV), high currents (several kAs), and transition or turn onrapidly (ns) and operate at high average powers or switching rates. Moreimportantly, handling high power (voltage times current) in highfrequency circuits requires that the switch inductance be small whichfurther requires a compact switch. A semiconductor switch that canprovide all the necessary parameters, without assembling a large arrayof switches, does not exist at the present time.

The GaAs switches conduct through optically initiated, electronavalanche current filaments in which the current is limited to about20-40 amps to prevent GaAs bulk material and contact damage. Thisfeature of non-nonlinear GaAs switches thus requires a very large numberof conducting filaments in order to operate in the kA current range.Previous work has demonstrated the ability to initiate multipleconducting filaments using multiple optical fibers (FIG. 3) to initiatemultiple triggering points to increase the total switch current.However, multiple conducting filaments, initiated near the cathode, tendto coalesce as the avalanche streamers progress between the switchelectrodes at a depth of 50-100 microns. This accumulation of currentfilaments also damages the contacts and bulk GaAs material. Further workhas demonstrated channeling or separation of the conducting filamentsusing photo-conducting lines across the switch using additional opticalenergy, as illustrated in FIG. 4. This optical boundary generation, thatrequires a rather complicated optical arrangement, has permitted thenon-linear GaAs switches to be used at higher total currents, but thetotal current is still less than required for a number of applications,and the optical complexity of the trigger system hinders wide usage.Furthermore, the total optical energy required to control the multipleparallel filaments approaches the quantity required to close a linearphoto-conductive switch.

One more feature of the GaAs switches is that the switches maintainconduction or “lock-on” after the conducting filaments are formed viaelectron avalanche streamers, much like gas discharges, that persistuntil the driving voltage is removed and current ceases. This is not thecase for a linear photoconductive switch, using GaAs or othersemiconductors, which opens after the optical pulse has terminated withthe material recombination time or several tens of ns to return to themulti-mega Ohm resistance. In both types of photo conductive andphoto-initiated conduction switches, the conduction voltage issufficiently large to limit the application of these devices to pulsegeneration applications with a limited duty cycle.

The optical injection of electrons into both the reverse biased PINdiode, FIG. 5, and the BJT, FIG. 6, using above band photons is similarto the linear photoconductive switch in that a large quantity of opticalenergy is required to initiate and sustain conduction. This shortcomingthus requires a large laser which hinders wide application, and in thecase of these devices, requires a large UV laser wavelength which ishindered by the transmission of UV photons through optical fibers.

SUMMARY OF INVENTION

In accordance with the present invention, there is provided an opticalmethod of initiating the collapse of the electric field of aninnovatively fabricated, reverse biased PN junction to cause asemiconductor switch to transition from a current blocking mode to acurrent conduction mode in a planar electron avalanche fashion. Thismethod of fabricating and optically initiating the switch closure isapplicable to conventional semiconductor switch configurations thatemploy a reverse biased PN junction, including, but not limited to,thyristors, bipolar transistors, and insulated gate bipolar transistors.This invention is also directed to a method of initiating (triggering) aplanar, electron avalanche closure of these types of semiconductorswitches with a small quantity of optical energy. In addition, theswitch according to the present invention closes or transitions innanoseconds rather than the tens to hundreds of nanoseconds closure ofpower semiconductor switches.

BRIEF DESCRIPTION OF DRAWINGS

A complete understanding of the preferred embodiments of the presentinvention may be obtained by reference to the accompanying drawings,when considered in conjunction with the subsequent, detaileddescription, in which:

FIG. 1 is a front perspective view of a linear photo conductive switch.

FIG. 2 is a cross-section view of a second configuration of a linearphoto-conductive switch.

FIG. 3 is the basic non-linear or high gain photo-conductive switch.

FIG. 4 is an improved non-linear or high gain photo-conductive switch.

FIG. 5 is an optically gated PIN diode.

FIG. 6 is an optically gated BJT.

FIG. 7 is an illustration of a reverse biased PN junction in a PIN diodeconfiguration that illustrates the basic principle of the presentinvention.

FIG. 8 is a graphical illustration of the energy band structure ofsilicon carbide (SiC).

FIG. 9 is a diagram depicting the basic structure of a preferredembodiment of the present invention.

FIG. 10 is a diagram of a 10 kV PIN diode switch, semiconductor physicsmodel indicating model dimensions, model circuit parameters, materialsand doping densities.

FIG. 11 is a diagram of the semiconductor physics model waveform outputsfor PIN diode voltage, PIN diode current density, and optical input.

DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 7 is an illustration of the principle of the present invention,showing a reverse biased PN junction in a PIN configuration, where theP-type (180): intrinsic type (181): N-type (182) structure is reversebiased near voltage breakdown by source (184) in series with loadresistor (183). The PN junction electric field, which results in theelectric field spatial distribution shown in the plot (185) with a peakvalue that is less than the breakdown electric field level (186), blockscurrent flow. In the blocking mode electric field plot (185) theelectric field (187) is at a maximum near the P-Intrinsic materialinterface, but less than the avalanche breakdown electric field value(186). The blocking electric field is a result of the depletion regioncharge (188). The object of this invention is to initiate an avalanchecollapse of the electric field produced by the charges in thereverse-biased depletion region. Prior means of collapsing the blockingelectric field have employed an external electric source to raise thereverse voltage on the PN junction to exceed the avalanche breakdownelectric field (186).

In the preferred embodiment of the present invention, sub-band opticalenergy (190) is introduced into the structure to produce electron-holepairs (192) that move in the electric field (191). The more mobileelectrons leave the structure while the slower holes add charge to theintrinsic side of the P-Intrinsic junction. The increase in positivehole charge (193) induces additional negative charge (194) to furtherincrease the electric field (191) to exceed the breakdown level (186)shown, and initiate the collapse of the depletion region throughelectron avalanche. Therefore, it may be seen that instead of applying afast rising voltage for the purpose of exceeding the breakdown voltageof a PN junction, the preferred embodiment of the present inventionchanges the electric field in the depletion region through absorbingsub-band optical energy, near the reverse-biased P-N interface in thestructure.

A simple calculation of the additional charge required to increase thePN junction electric field (187) to exceed the breakdown electric field(186) can be used to estimate the equivalent optical energy that isrequired to produce the electric charge. TABLE 1 is a simple estimationof the optical energy required to overvolt three PIN diodes. Forexample, to overvolt a reverse biased, 10 kV PIN diode to 13 kV requiresan optical energy of less than 100 nJ per square cm, assuming unityquantum efficiency. In the preferred embodiment, the common PINstructure of FIG. 7 is modified to provide the mid-band dopant sitescapable of absorbing the sub-band optical energy. Specifically, anadditional layer is added to the PN junction interface to preferentiallyabsorb the sub-band optical energy. The new layer can be added via anepitaxial deposition or implantation. The energy level of the dopants inthe new layer added to the common PIN structure as part of the preferredembodiment must be mid-band acceptors and/or donors. Therefore, theenergy levels of various dopants in the base material must be known.

TABLE 1 Calculation of Over Voltage Charge and Optical RequirementsParameter Symbol 100 kV PAS 10 kV PAS 10 kV PAS Unit Comments ReverseBias Voltage 100 10 10 kV Over Voltage 100 10 3 kV Total Applied Voltage200 20 13 kV PIN Structure Cross Section Ac 1.00E−04 1.00E−04 1.00E−04m2 Blocking Voltage Vb 1.00E+05 1.00E+04 1.00E+04 V SiC DieletricStrength Ebd 3.00E+08 3.00E+08 3.00E+08 V/m Breakdown Thickness tbd3.33E−04 3.33E−05 3.33E−05 m2 p+ doping NA 1.00E+25 1.00E+25 1.00E+25m-3 n doping ND 7.00E+19 7.00E+19 7.00E+19 m-3 Semi-insulating SiC pnvoltage Vo 3.00E+00 3.00E+00 3.00E+00 V Blocking Voltage Va 1.00E+051.00E+04 1.00E+04 V Bias SiC Dielectric Constant 9 9 9 Depletion RegionBlocking Voltage Wafer thickness 1.50E−03 3.50E−04 2.50E−04 m BlockingVoltage 1.00E+05 1.00E+04 1.00E+04 V Depletion Region Width - BlockingWjb 1.19E−03 3.77E−04 3.77E−04 m xp 8.35E−09 2.64E−09 2.64E−09 m xn1.19E−03 3.77E−04 3.77E−04 m Electric Field At Interface Epn 8.39E+072.65E+07 2.65E+07 V/m Blocking E-field SiC Dielectric Constant 9 9 9

 Depletion Region - Blocking Cb 6.68E−12 2.11E−11 2.11E−11 F for 1 sq cmarea Blocking charge Qb 6.68E−07 2.11E−07 2.11E−07 C Bias OvervoltageDepletion Region Overvoltage DV 1.00E+05 1.00E+04 3.00E+03 V TotalApplied Voltage 2.00E+05 2.00E+04 1.30E+04 V Risetime Tr 1.00E−091.00E−09 1.00E−09 s Voltage change rate dV/dt 1.00E+14 1.00E+13 3.00E+12V/s

 2X over voltage depletion region Wjov 1.69E−03 5.33E−04 4.30E−04 mAvalanche Electric Field E

1.19E+08 3.75E+07 3.02E+07 V/m

ce Depletion Region - Overvoltage Cov 4.72E−12 1.49E−11 1.85E−11 C 2XOvervoltage Charge Qa 9.44E−07 2.99E−07 2.41E−07 C Delta Charge Qa-Qb2.77E−07 8.74E−08 2.96E−08 C net charge required Wavelength 5.32E−075.32E−07 5.32E−07 m doubled YAG Frequency 5.64E+14 5.64E+14 5.64E+14 HzPhoton Energy 3.74E−19 3.74E−19 3.74E−19 J Number Electron-hole pairs1.73E+12 5.47E+11 1.85E+11 ea holes provide charge

rgy to produce same delta charge 6.46E−07 2.04E−07 6.91E−08 J 1electron-hole/photon 646.26 204.30 69.09 nJ per square cm Number ofPhotons 1.73E+21 5.47E+20 1.85E+20 ea

indicates data missing or illegible when filed

FIG. 8 is an illustration of the energy band structure of siliconcarbide (SiC). The SiC band gap between the conduction band energy (200)and the valence band energy (201) determines the band gap energy (202).The photon energy required to ionize the mid-band dopants (206) must beless than the band gap energy (202) as illustrated in FIG. 8. Acceptorswith energy levels near the valence band and donors with energy levelsnear the conduction band are ionized at room temperature Thus dopantswith mid-band energy levels, such as Vanadium and/or Zinc, near themiddle of the SiC band gap provide absorption sites for the sub-bandoptical energy with photon energy sufficient photon energy (206). Therelationship of the mid-band dopant energy (205) and the conduction bandenergy (200) determine the photon energy (206) required to ionize themid-band dopants. The selection of vanadium as the target absorptionrequires that the photon energy (206) be greater than the energyrequired to ionize the vanadium, which is the difference between theconduction band energy (203) and the vanadium acceptor energy (205). Forexample, the Vanadium energy level is about 1.1 eV and the 4H SiC bandgap energy is about 3.2 eV such that the sub-band photon energy shouldbe greater than 2.1 eV. The photon energy of various optical sources,calculated in TABLE 2, indicates a green optical source such as doubledYAG laser or a green laser-diode would be sufficient.

TABLE 2 Photon Wavelength Energy Source Nd: YAG 2 × Nd: YAG 3 × Nd: YAGNitrogen Unit Photon Wavelength 1064 532 355 337 nm Photon Frequency2.82E+14 5.64E+14 8.45E+14 8.90E+14 Hz Photon Energy 1.87E−19 3.74E−195.60E−19 5.90E−19 J     1.17    2.34    3.50    3.69 eV

FIG. 9 is an illustration of the basic structure of a preferredembodiment of the present invention according to the principlesexplained above. Specifically, a PN-type junction with an additionallayer at the PN-junction interface, in a PIN configuration is reversebiased by source voltage (228) in series with load resistor (229). Themetal-Ohmic contact (220) is connected to the load resistance (228) andthe voltage source (229) that reverse biased the PN junction. The PINstructure consists of a P-type layer (227) that interfaces to a criticalpart of this preferred embodiment, a mid-band dopant layer (226). Themid-band dopant layer is formed from an Intrinsic-type material orslightly N-type material doped with a mid-band dopant, preferablyincluding vanadium if a SiC semiconductor implementation is used. Thismid-band dopant layer is followed by the Intrinsic layer or slightlyN-type layer (222), then the heavily doped N-type layer (224), and theN-type metal-Ohmic contact (220). The reverse biased junction results ina blocking electric field (234), with peak value (23) less than thebreakdown electric field (231) in the depletion region (221). TheSub-band optical energy (223) is injected into the structure (throughthe N-type contact is one option) and is absorbed preferentially in themid-band dopant layer (226), to produce electrons and holes. Theadditional holes increase the electric field (235) to exceed theavalanche threshold electric field (232), which results in avalanchebreakdown of the SiC in the region (233) near the PN interface. Thishighly conducting, plasma region then expands to move toward the N-type(224) contact while compressing and increasing the applied electricfield to speed the avalanche process in a regenerative manner. As theconducting region reaches the N-type contact, the blocking field andblocking voltage rapidly disappears to allow current to flow through theconducting avalanche plasma.

FIG. 10 is a diagram of the preferred embodiment of a 10 kV PIN diode,semiconductor physics model with the densities, dimensions, and circuitparameters used to generate the operational waveforms shown in FIG. 11.

FIG. 11 is a set of plots of the SiC PIN diode voltage, PIN diodecurrent density, and optical input power for the semiconductor model ofFIG. 10 in which the optical power was 0.5 W/cm² and the initial reversebias was 9500 V. The avalanche gain in the semiconductor model wasadjusted to match reverse self-breakdown voltage of a known SiC PINdiode to calibrate the model.

It will be understood that semiconductor materials other than SiC may beused in the implementation of the invention in various alternativeembodiments. Such materials include, without limitation, silicon,gallium arsenide, gallium nitride, and aluminum nitride.

Since other modifications and changes varied to fit particular operatingrequirements and environments will be apparent to those skilled in theart, the invention is not considered limited to the example chosen forpurposes of disclosure, and covers all changes and modifications whichdo not constitute departures from the true spirit and scope of thisinvention.

Having thus described the invention, what is desired to be protected byLetters Patent is presented in the subsequently appended claims.

What is claimed is:
 1. A semiconductor switch, comprising: a. a firstlayer comprising a P-type semiconductor material; b. a second layercomprising a semiconductor material doped with a mid-band dopant,wherein the second layer is in contact with the first layer; c. a thirdlayer comprising an Intrinsic-type or slightly N-type semiconductormaterial, wherein the third layer is in contact with the second layerthereby forming a semiconductor junction interface between the secondlayer and the third layer; and d. a fourth layer comprising an N-typesemiconductor material, wherein the fourth layer is in contact with thethird layer; wherein the semiconductor switch is configurable in areverse-bias circuit such that in a first switch state the semiconductorjunction interface is reverse biased thereby blocking current flowthrough the circuit in the absence of optical energy from an opticalenergy source, and wherein optical energy applied to the switch from theoptical energy source produces a second switch state in which asufficient electrical charge is produced in the switch to cause anelectric field present at a depletion region in the switch to exceed abreakdown level at the semiconductor junction interface, therebyenabling a flow of current through the switch.
 2. The semiconductorswitch of claim 1, wherein an energy level of the optical energy appliedto the switch from the optical energy source is less than a band-gapenergy of a basic material forming the switch, and further wherein theenergy level of the optical energy applied to the switch from theoptical energy source is sufficient to ionize the mid-band dopant. 3.The semiconductor switch of claim 2, wherein the basic materialcomprises silicon carbide.
 4. The semiconductor switch of claim 3,wherein the mid-band dopant comprises vanadium or zinc or a combinationof vanadium and zinc.
 5. The semiconductor switch of claim 2, whereinthe fourth layer and third layer are configured to allow at least someof the optical energy from the optical energy source to pass through,and the second layer is configured to absorb the optical energy passingthrough the fourth and third layer.
 6. The semiconductor switch of claim2, further comprising a metal-Ohmic contact forming an electricalconnection between the fourth layer and the reverse biasing circuit. 7.The semiconductor switch of claim 6, wherein the metal-Ohmic contactcomprises a contact opening, and wherein the metal-Ohmic contact ispositioned to receive optical energy from the optical energy sourcethrough the contact opening.
 8. An optically-activated switchingapparatus, comprising: a. a semiconductor device, comprising: i. a firstlayer comprising a P-type semiconductor material; ii. a second layercomprising a material doped with a mid-band dopant, wherein the secondlayer is in contact with the first layer; iii. a third layer comprisingan Intrinsic-type or slightly N-type semiconductor material, wherein thethird layer is in contact with the second layer thereby forming asemiconductor interface between the second layer and the third layer;and iv. a fourth layer comprising an N-type semiconductor material,wherein the fourth layer is in contact with the third layer; b. areverse biasing circuit electrically connected to the semiconductordevice to apply a reverse bias to the semiconductor device; and c. anoptical energy source configured to selectively direct optical energyonto the semiconductor device.
 9. The optically-activated switchingapparatus of claim 8, wherein the semiconductor device comprises siliconcarbide.
 10. The optically-activated switching apparatus of claim 9,wherein the mid-band dopant comprises vanadium.
 11. Theoptically-activated switching apparatus of claim 10, wherein the photonenergy of the optical energy source is at least 2.1 eV.
 12. Theoptically-activated switching apparatus of claim 11, wherein the opticalenergy source is a green light source.
 13. The optically-activatedswitching apparatus of claim 12, wherein the optical energy sourcecomprises a frequency-doubled YAG laser.
 14. The optically-activatedswitching apparatus of claim 11, wherein the optical energy sourcecomprises a green laser diode.
 15. The optically-activated switchingapparatus of claim 8, wherein the optical energy source is configured toapply the optical energy at the fourth layer.
 16. A method for opticallyactivating a semiconductor switch, wherein the switch comprises a firstlayer comprising a P-type semiconductor material, a second layercomprising a semiconductor material doped with a mid-band dopant, athird layer comprising an Intrinsic-type or slightly N-typesemiconductor material, and a fourth layer comprising an N-typesemiconductor material, wherein the method comprises the steps of: a.reverse biasing the switch by applying a source potential comprising apositive lead and a negative lead, wherein the positive lead iselectrically connected to the fourth layer and the negative lead iselectrically connected to the first layer; b. directing an opticalenergy source toward the semiconductor switch; and c. activating theoptical energy source to apply sufficient optical energy to cause anelectric field at a depletion layer adjacent an interface within thesemiconductor switch to exceed a breakdown level, thereby enabling aflow of current.
 17. The method of claim 16, wherein the directing anoptical energy source toward the semiconductor switch step comprises thestep of directing the optical energy source toward the fourth layer ofthe semiconductor switch.
 18. The method of claim 16, wherein theactivating the optical energy source step comprises the application ofphoton energy of at least 2.1 eV.
 19. The method of claim 16, whereinthe activating the optical energy source step comprises the applicationof green optical energy to the semiconductor switch.